Surface engineering in Cu(In,Ga)Se2 solar cells
Identifieur interne : 000435 ( Main/Repository ); précédent : 000434; suivant : 000436Surface engineering in Cu(In,Ga)Se2 solar cells
Auteurs : RBID : Pascal:13-0193152Descripteurs français
- Pascal (Inist)
- Traitement surface, Cellule solaire, Propriété surface, Circuit multiétage, Spectrométrie SIMS, Diffusion mutuelle, Spectre photoélectron RX, Effet température, Dépendance température, Modélisation, Composant électronique, Système information, Belgique, Evaluation performance, Revêtement antiréfléchissant, Tension circuit ouvert, Couche épaisse, Niveau défaut, Séléniure de cuivre, Séléniure de gallium, Séléniure d'indium, Composé quaternaire, Couche mince, Gallium, Composé ternaire, Indium, Cu(In,Ga)Se2, CuInSe2.
- Wicri :
- geographic : Belgique.
- concept : Composant électronique.
English descriptors
- KwdEn :
- Antireflection coating, Belgium, Copper selenides, Defect level, Electronic component, Gallium, Gallium selenides, Indium, Indium selenides, Information system, Interdiffusion, Modeling, Multistage circuit, Open circuit voltage, Performance evaluation, Quaternary compound, Secondary ion mass spectrometry, Solar cell, Surface properties, Surface treatment, Temperature dependence, Temperature effect, Ternary compound, Thick film, Thin film, X-ray photoelectron spectra.
Abstract
Surface modifications of three-stage co-evaporated Cu(In,Ga)Se2 (CIGS) thin films are investigated by finishing the evaporation with gallium-free (CuInSe2, CIS) stages of various lengths. Secondary-ion mass spectrometry shows substantial interdiffusion of indium and gallium, smearing out the Ga/(Ga + In) profile so that the addition of a CIS layer merely lowers the gallium content at the surface. For the thinnest top layer, equivalent to 20 nm of pure CIS, X-ray photoelectron spectroscopy does not detect any compositional difference compared with the reference device. The modifications are evaluated electrically both by temperature-dependent characterisation of actual solar-cell devices and by modelling, using the latest version of SCAPS-1D (Electronics and Information Systems, Ghent University, Belgium). The best solar-cell device from this series is obtained for the 20 nm top layer, with an efficiency of 16.6% after antireflective coating. However, we observe a trend of decreasing open-circuit voltage for increasingly thick top layers, and we do not find direct evidence that the lowering of the gallium concentration at the CIGS surface should generally be expected to improve the device performance. A simulated device with reduced bulk and interface defect levels achieves nearly 20% efficiency, but the trends concerning the CIS top layer remain the same.
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Pascal:13-0193152Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Surface engineering in Cu(In,Ga)Se<sub>2 </sub>solar cells</title><author><name sortKey="Schleussner, Sebastian Michael" uniqKey="Schleussner S">Sebastian Michael Schleussner</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Solid State Electronics, Uppsala University</s1><s2>Uppsala</s2><s3>SWE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Suède</country><wicri:noRegion>Uppsala</wicri:noRegion></affiliation></author><author><name sortKey="Pettersson, Jonas" uniqKey="Pettersson J">Jonas Pettersson</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Solid State Electronics, Uppsala University</s1><s2>Uppsala</s2><s3>SWE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Suède</country><wicri:noRegion>Uppsala</wicri:noRegion></affiliation></author><author><name sortKey="Torndahl, Tobias" uniqKey="Torndahl T">Tobias Törndahl</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Solid State Electronics, Uppsala University</s1><s2>Uppsala</s2><s3>SWE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Suède</country><wicri:noRegion>Uppsala</wicri:noRegion></affiliation></author><author><name sortKey="Edoff, Marika" uniqKey="Edoff M">Marika Edoff</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Solid State Electronics, Uppsala University</s1><s2>Uppsala</s2><s3>SWE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Suède</country><wicri:noRegion>Uppsala</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0193152</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0193152 INIST</idno><idno type="RBID">Pascal:13-0193152</idno><idno type="wicri:Area/Main/Corpus">000D24</idno><idno type="wicri:Area/Main/Repository">000435</idno></publicationStmt><seriesStmt><idno type="ISSN">1062-7995</idno><title level="j" type="abbreviated">Prog. photovolt.</title><title level="j" type="main">Progress in photovoltaics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Antireflection coating</term><term>Belgium</term><term>Copper selenides</term><term>Defect level</term><term>Electronic component</term><term>Gallium</term><term>Gallium selenides</term><term>Indium</term><term>Indium selenides</term><term>Information system</term><term>Interdiffusion</term><term>Modeling</term><term>Multistage circuit</term><term>Open circuit voltage</term><term>Performance evaluation</term><term>Quaternary compound</term><term>Secondary ion mass spectrometry</term><term>Solar cell</term><term>Surface properties</term><term>Surface treatment</term><term>Temperature dependence</term><term>Temperature effect</term><term>Ternary compound</term><term>Thick film</term><term>Thin film</term><term>X-ray photoelectron spectra</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Traitement surface</term><term>Cellule solaire</term><term>Propriété surface</term><term>Circuit multiétage</term><term>Spectrométrie SIMS</term><term>Diffusion mutuelle</term><term>Spectre photoélectron RX</term><term>Effet température</term><term>Dépendance température</term><term>Modélisation</term><term>Composant électronique</term><term>Système information</term><term>Belgique</term><term>Evaluation performance</term><term>Revêtement antiréfléchissant</term><term>Tension circuit ouvert</term><term>Couche épaisse</term><term>Niveau défaut</term><term>Séléniure de cuivre</term><term>Séléniure de gallium</term><term>Séléniure d'indium</term><term>Composé quaternaire</term><term>Couche mince</term><term>Gallium</term><term>Composé ternaire</term><term>Indium</term><term>Cu(In,Ga)Se2</term><term>CuInSe2</term></keywords><keywords scheme="Wicri" type="geographic" xml:lang="fr"><term>Belgique</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Composant électronique</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Surface modifications of three-stage co-evaporated Cu(In,Ga)Se<sub>2</sub> (CIGS) thin films are investigated by finishing the evaporation with gallium-free (CuInSe<sub>2</sub>, CIS) stages of various lengths. Secondary-ion mass spectrometry shows substantial interdiffusion of indium and gallium, smearing out the Ga/(Ga + In) profile so that the addition of a CIS layer merely lowers the gallium content at the surface. For the thinnest top layer, equivalent to 20 nm of pure CIS, X-ray photoelectron spectroscopy does not detect any compositional difference compared with the reference device. The modifications are evaluated electrically both by temperature-dependent characterisation of actual solar-cell devices and by modelling, using the latest version of SCAPS-1D (Electronics and Information Systems, Ghent University, Belgium). The best solar-cell device from this series is obtained for the 20 nm top layer, with an efficiency of 16.6% after antireflective coating. However, we observe a trend of decreasing open-circuit voltage for increasingly thick top layers, and we do not find direct evidence that the lowering of the gallium concentration at the CIGS surface should generally be expected to improve the device performance. A simulated device with reduced bulk and interface defect levels achieves nearly 20% efficiency, but the trends concerning the CIS top layer remain the same.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1062-7995</s0></fA01><fA03 i2="1"><s0>Prog. photovolt.</s0></fA03><fA05><s2>21</s2></fA05><fA06><s2>4</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Surface engineering in Cu(In,Ga)Se<sub>2 </sub>solar cells</s1></fA08><fA11 i1="01" i2="1"><s1>SCHLEUSSNER (Sebastian Michael)</s1></fA11><fA11 i1="02" i2="1"><s1>PETTERSSON (Jonas)</s1></fA11><fA11 i1="03" i2="1"><s1>TÖRNDAHL (Tobias)</s1></fA11><fA11 i1="04" i2="1"><s1>EDOFF (Marika)</s1></fA11><fA14 i1="01"><s1>Solid State Electronics, Uppsala University</s1><s2>Uppsala</s2><s3>SWE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA20><s1>561-568</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>26755</s2><s5>354000174777700170</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>11 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0193152</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Progress in photovoltaics</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>Surface modifications of three-stage co-evaporated Cu(In,Ga)Se<sub>2</sub> (CIGS) thin films are investigated by finishing the evaporation with gallium-free (CuInSe<sub>2</sub>, CIS) stages of various lengths. Secondary-ion mass spectrometry shows substantial interdiffusion of indium and gallium, smearing out the Ga/(Ga + In) profile so that the addition of a CIS layer merely lowers the gallium content at the surface. For the thinnest top layer, equivalent to 20 nm of pure CIS, X-ray photoelectron spectroscopy does not detect any compositional difference compared with the reference device. The modifications are evaluated electrically both by temperature-dependent characterisation of actual solar-cell devices and by modelling, using the latest version of SCAPS-1D (Electronics and Information Systems, Ghent University, Belgium). The best solar-cell device from this series is obtained for the 20 nm top layer, with an efficiency of 16.6% after antireflective coating. However, we observe a trend of decreasing open-circuit voltage for increasingly thick top layers, and we do not find direct evidence that the lowering of the gallium concentration at the CIGS surface should generally be expected to improve the device performance. 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l="SPA"><s0>Europa</s0><s2>NG</s2></fC07><fN21><s1>175</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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